• DocumentCode
    2602119
  • Title

    Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology

  • Author

    Nishi, Yoshifumi ; Tsuchiya, Yoshinori ; Kinoshita, Atsuhiro ; Yamauchi, Takashi ; Koga, Junji

  • Author_Institution
    Toshiba Corp., Yokohama
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    135
  • Lastpage
    138
  • Abstract
    It is demonstrated that Schottky barrier height (PhiB) for NiSi/Si junction can be modulated by interfacial segregation of metals. Thin films of rare earth (RE) metals and platinum (Pt) are deposited on NiSi/Si Schottky diodes and annealed. The metals diffuse into NiSi and segregate at NiSi/Si interface, which leads to PhiB modulation by 0.1 eV. Similar technique can be applied to PtSi/Si junction as well for advanced dual silicide process.
  • Keywords
    Schottky barriers; Schottky diodes; annealing; nickel compounds; platinum; rare earth metals; semiconductor junctions; silicon compounds; Schottky barrier height; Schottky diodes; interfacial segregation; nickel; platinum; rare earth metals; silicide technology; silicon; Annealing; Charge carrier processes; Grain boundaries; MOS devices; Schottky barriers; Schottky diodes; Semiconductor thin films; Silicides; Sputtering; Thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418883
  • Filename
    4418883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2602119