• DocumentCode
    2602272
  • Title

    Silicon MOSFET technology for RF ICs

  • Author

    Lovelace, David ; Ngo, David ; Costa, Julio ; Camilleri, Natalino

  • Volume
    3
  • fYear
    1995
  • fDate
    27-29 Sept. 1995
  • Firstpage
    1238
  • Abstract
    Application of silicon MOSFET technologies to high frequency RF transceiver functions will be presented. Starting with a description of the high frequency characteristics of silicon MOSFETs designed specifically for RF applications. These applications include several RF functions where silicon MOSFETs have not traditionally been used such as low noise amplifiers, balanced mixers, RF switches and integrated power amplifiers. Finally a description of the performance trade-offs associated with silicon BJT (bipolar junction transistor) technology are given along with an evaluation of how BiCMOS (bipolar-CMOS) technologies can sometimes serve as the best solution to RF IC designs
  • Keywords
    BiCMOS integrated circuits; Integrated circuit noise; Low-noise amplifiers; MOSFET circuits; Power MOSFET; Radio frequency; Radiofrequency amplifiers; Silicon; Switches; Transceivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Personal, Indoor and Mobile Radio Communications, 1995. PIMRC'95. Wireless: Merging onto the Information Superhighway., Sixth IEEE International Symposium on
  • Conference_Location
    Toronto, Ont., Canada
  • Print_ISBN
    0-7803-3002-1
  • Type

    conf

  • DOI
    10.1109/PIMRC.1995.477360
  • Filename
    477360