DocumentCode
2602272
Title
Silicon MOSFET technology for RF ICs
Author
Lovelace, David ; Ngo, David ; Costa, Julio ; Camilleri, Natalino
Volume
3
fYear
1995
fDate
27-29 Sept. 1995
Firstpage
1238
Abstract
Application of silicon MOSFET technologies to high frequency RF transceiver functions will be presented. Starting with a description of the high frequency characteristics of silicon MOSFETs designed specifically for RF applications. These applications include several RF functions where silicon MOSFETs have not traditionally been used such as low noise amplifiers, balanced mixers, RF switches and integrated power amplifiers. Finally a description of the performance trade-offs associated with silicon BJT (bipolar junction transistor) technology are given along with an evaluation of how BiCMOS (bipolar-CMOS) technologies can sometimes serve as the best solution to RF IC designs
Keywords
BiCMOS integrated circuits; Integrated circuit noise; Low-noise amplifiers; MOSFET circuits; Power MOSFET; Radio frequency; Radiofrequency amplifiers; Silicon; Switches; Transceivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Personal, Indoor and Mobile Radio Communications, 1995. PIMRC'95. Wireless: Merging onto the Information Superhighway., Sixth IEEE International Symposium on
Conference_Location
Toronto, Ont., Canada
Print_ISBN
0-7803-3002-1
Type
conf
DOI
10.1109/PIMRC.1995.477360
Filename
477360
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