DocumentCode
2602389
Title
High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation
Author
Dosunmu, O.I. ; Emsley, M.K. ; Ünlü, M.S. ; Cannon, D.D. ; Kimerling, L.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
fYear
2004
fDate
4-6 Oct. 2004
Firstpage
266
Lastpage
268
Abstract
We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.
Keywords
elemental semiconductors; germanium; infrared detectors; optical communication equipment; photodetectors; silicon-on-insulator; 12.8 GHz; 1550 nm; 3 dB; 75 percent; Ge; Ge-on-SOI photodetectors; Si; Si reflecting substrates; high-speed detectors; quantum efficiency; resonant cavity enhanced photodetectors; Bandwidth; Communication industry; Data communication; Detectors; Industrial electronics; Materials science and technology; Optical fiber communication; Photodetectors; Resonance; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 2004. MWP'04. 2004 IEEE International Topical Meeting on
Print_ISBN
0-7803-8491-1
Type
conf
DOI
10.1109/MWP.2004.1396892
Filename
1396892
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