Title :
The Response of the Threshold Voltages of the Transistors in Simple MOS Circuits to Tests at Elevated Temperatures
Author_Institution :
Post Office Telecommunications Headquarters, London, England
Keywords :
Circuit testing; Integrated circuit testing; MOSFETs; Mathematical model; Procurement; Stress; Temperature dependence; Temperature distribution; Temperature measurement; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1971.362491
