DocumentCode
2602652
Title
Factors Involved in the Scanning Electron Microscope Analysis of Glass Passivated Devices
Author
Gonzales, A.J.
Author_Institution
Motorola, Inc., Semiconductor Products Division, Phoenix, Arizona 85008
fYear
1971
fDate
25993
Firstpage
142
Lastpage
148
Abstract
Glass passivation of device surfaces can modify the information which can be obtained by the Scanning Electron Microscope. Integrated circuits containing a variety of defects have been studied before and after passivation to illustrate the deleterious effects of passivation on scanning microscopy analysis. In addition advantages of viewing the glass surface and techniques of glass removal and contrast enhancement are investigated.
Keywords
Aluminum; Conductive films; Electron beams; Electron emission; Glass; Image resolution; Ohmic contacts; Optical microscopy; Passivation; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1971.362507
Filename
4207876
Link To Document