Title :
Through-silicon via (TSV) depletion effect
Author :
Cho, Jonghyun ; Kim, Myunghoi ; Kim, Joohee ; Pak, Jun So ; Kim, Joungho ; Lee, Hyungdong ; Lee, Junho ; Park, Kunwoo
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
The effects of through-silicon via (TSV) depletion are analyzed based on the frequency and time-domain measurements in this paper. As TSV dc bias voltage increases, a TSV depletion region is generated; this region decreases TSV noise coupling at frequencies below 1 GHz. It also creates duty- cycle distortion of the coupled signal, which results from the nonlinearity of the TSV.
Keywords :
distortion; integrated circuit interconnections; three-dimensional integrated circuits; DC bias voltage increases; TSV noise coupling; duty-cycle distortion; frequency-domain measurements; through-silicon via depletion effect; time-domain measurements; Capacitance; Couplings; Frequency measurement; Noise; Semiconductor device measurement; Through-silicon vias; Voltage measurement; TSV coupling; depletion; distortion; large signal; measurement; nonlinearity; through-silicon via (TSV);
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2011 IEEE 20th Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-9398-2
Electronic_ISBN :
pending
DOI :
10.1109/EPEPS.2011.6100198
