Title :
Statistical analysis and modeling of programming and retention in PCM arrays
Author :
Mantegazza, D. ; Ielmini, Daniele ; Varesi, E. ; Pirovano, A. ; Lacaita, A.L.
Author_Institution :
Politecnico di Milano, Milan
Abstract :
In this work programming and retention statistics in phase change memory arrays are discussed and modeled. In particular, we provide a) an analytical, empirical model for set, reset and retention statistics and b) a physics-based retention model based on crystallization in presence of composition fluctuations at the nm scale of the active material. The models allow predicting programming/retention distributions at array level.
Keywords :
crystallisation; integrated memory circuits; nanostructured materials; phase change materials; statistical analysis; active material; composition fluctuations; crystallization; phase change memory arrays; physics-based retention model; programming statistics; statistical analysis; Analytical models; Composite materials; Crystallization; Fluctuations; Phase change materials; Phase change memory; Phased arrays; Statistical analysis; Statistical distributions; Statistics;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418933
