• DocumentCode
    2603174
  • Title

    A Novel Cross-Spacer Phase Change Memory with Ultra-Small Lithography Independent Contact Area

  • Author

    Chen, W.S. ; Lee, C.M. ; Chao, D.S. ; Chen, Y.C. ; Chen, F. ; Chen, C.W. ; Yen, P.H. ; Chen, M.J. ; Wang, W.H. ; Hsiao, T.C. ; Yeh, J.T. ; Chiou, S.H. ; Liu, M.Y. ; Wang, T.C. ; Chein, L.L. ; Huang, C.M. ; Shih, N.T. ; Tu, L.S. ; Huang, D. ; Yu, T.H. ; Ka

  • Author_Institution
    ITRI, Hsinchu
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    A cross-spacer phase change memory (PCM) cell with ultra-small lithography-independent contact area for reduced writing current has been successfully demonstrated. By crossing the spacer sidewalls of phase change and heater material, a small contact area of ~1,000 nm2 with 0.23 mA reset current is therefore obtained. The result of a derived 2-bit per cell (Chain) structure is also shown. The cross-spacer cell structure is a potential candidate for PCM with multi-bit per cell in one PC layer.
  • Keywords
    lithography; phase change materials; PCM cell; cross-spacer phase change memory; lithography; Chemical technology; Electrodes; Etching; Laboratories; Lithography; Phase change materials; Phase change memory; Space heating; Space technology; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418935
  • Filename
    4418935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2603174