DocumentCode
2603186
Title
The Role of Interfaces in Damascene Phase-Change Memory
Author
Kencke, David L. ; Karpov, Ilya V. ; Johnson, Brian G. ; Lee, Sean Jong ; Kau, DerChang ; Hudgens, Stephen J. ; Reifenberg, John P. ; Savransky, Semyon D. ; Zhang, Jingyan ; Giles, Martin D. ; Spadini, Gianpaolo
Author_Institution
Intel Corp., Hillsboro
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
323
Lastpage
326
Abstract
Phase change memory (PCM) research has largely focused on bulk properties to evaluate cell efficiency. Now both electrical and thermal interface resistances are characterized and shown to be critical for understanding power in a novel damascene-GST cell. Interfaces reduce reset power 20% and reset current 40% and allow reset current to scale faster than it would without interfaces.
Keywords
antimony compounds; germanium compounds; semiconductor storage; GeSbTe; damascene-GST cell; electrical interface resistance; phase-change memory; thermal interface resistance; Conductivity; Contacts; Crystallization; Educational institutions; Electric resistance; Electrodes; Etching; Phase change materials; Phase change memory; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4418936
Filename
4418936
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