Title :
Mechanism of Vfb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function
Author :
Song, S.C. ; Park, C.S. ; Price, J. ; Burham, C. ; Choi, R. ; Wen, H.C. ; Choi, K. ; Tseng, H.-H. ; Lee, B.H. ; Jammy, R.
Author_Institution :
SEMATECH, Austin
Abstract :
Vfb roll-off phenomena in high work function (WF) metal gate on high-k is successfully explained by progressive oxygen vacancy (Vo +) generation in high-k as bottom oxide scales. Based on this understanding, low temperature O incorporation (LTOI) process has been developed, which reduces PMOS Vt significantly by enriching high-k with O without increasing equivalent oxide thickness (EOT).
Keywords :
MOSFET; dielectric materials; electric potential; high-k dielectric thin films; ion implantation; oxygen; work function; O; PMOS band edge work function; equivalent oxide thickness; high work function metal gate MOSFET; high-k dielectrics; low temperature oxygen incorporation; oxygen vacancy generation; roll-off phenomena; Annealing; Capacitors; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Oxidation; Temperature; Tin;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418940
