DocumentCode
2603410
Title
High Temperature Reverse Bias Testing at Wafer Level
Author
Ebel, G.H.
Author_Institution
Singer Kearfott Division, Little Fa´´lls, New Jersey
fYear
1972
fDate
26390
Firstpage
204
Lastpage
207
Abstract
The complex hybrids being developed today probably will be a critical reliability problem if a better method of screening semiconductors prior to assembly into the hybrid is not developed. This paper outlines an approach that is presently under development which appears to hold a great deal of promise. It allows for an all gold interconnect system, improves the yield by using burned in chips, and makes the semiconductor and interconnect system less dependent on good, hermetic packages. It appears that burning in and screening at wafer level is a cost effective method of improving the reliability of complex hybrids.
Keywords
Assembly; Capacitors; Hybrid integrated circuits; Integrated circuit interconnections; Integrated circuit packaging; Integrated circuit reliability; Microassembly; Resistors; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1972. 10th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1972.362553
Filename
4207925
Link To Document