• DocumentCode
    2603451
  • Title

    Quantum, Power, and Compound Semiconductors - Reliability and Characterization Of Power HEMTs

  • Author

    Kizilyalli, Isik C. ; Chen, Kevin J.

  • Author_Institution
    Nitronex Corpotation
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    379
  • Lastpage
    379
  • Keywords
    Aluminum gallium nitride; Degradation; Failure analysis; Gallium nitride; HEMTs; MODFETs; Plasma immersion ion implantation; Plasma sources; Semiconductor device reliability; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418951
  • Filename
    4418951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2603451