DocumentCode
2603585
Title
Internal Dielectric Transduction of a 4.5 GHz Silicon Bar Resonator
Author
Weinstein, Dana ; Bhave, Sunil A.
Author_Institution
Cornell Univ., Ithaca
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
415
Lastpage
418
Abstract
This paper presents experimental verification of frequency scaling in an internal dielectric transduced resonator. A silicon bar resonator is excited in its 3rd and 9th longitudinal harmonic modes at 1.53 and 4.51 GHz, respectively. The resonator demonstrates a 2 dB improvement in transduction efficiency in its 9th harmonic relative to its 3rd harmonic, normalized to the quality Q of the resonance. This result is in close agreement with theory, promising low- impedance transduction of silicon bulk acoustic resonators at frequencies exceeding 10 GHz.
Keywords
acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; dielectric resonators; elemental semiconductors; micromechanical resonators; silicon; MEMS resonator; Si; bulk acoustic resonators; frequency 1.53 GHz; frequency 4.51 GHz; frequency scaling verification; internal dielectric transduction; longitudinal harmonic modes; low-impedance transduction; silicon bar resonator; Acoustic applications; Dielectric films; Dielectric losses; Dielectric measurements; Frequency synthesizers; Micromechanical devices; Resonance; Resonant frequency; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4418961
Filename
4418961
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