• DocumentCode
    2603585
  • Title

    Internal Dielectric Transduction of a 4.5 GHz Silicon Bar Resonator

  • Author

    Weinstein, Dana ; Bhave, Sunil A.

  • Author_Institution
    Cornell Univ., Ithaca
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    415
  • Lastpage
    418
  • Abstract
    This paper presents experimental verification of frequency scaling in an internal dielectric transduced resonator. A silicon bar resonator is excited in its 3rd and 9th longitudinal harmonic modes at 1.53 and 4.51 GHz, respectively. The resonator demonstrates a 2 dB improvement in transduction efficiency in its 9th harmonic relative to its 3rd harmonic, normalized to the quality Q of the resonance. This result is in close agreement with theory, promising low- impedance transduction of silicon bulk acoustic resonators at frequencies exceeding 10 GHz.
  • Keywords
    acoustic microwave devices; acoustic resonators; bulk acoustic wave devices; dielectric resonators; elemental semiconductors; micromechanical resonators; silicon; MEMS resonator; Si; bulk acoustic resonators; frequency 1.53 GHz; frequency 4.51 GHz; frequency scaling verification; internal dielectric transduction; longitudinal harmonic modes; low-impedance transduction; silicon bar resonator; Acoustic applications; Dielectric films; Dielectric losses; Dielectric measurements; Frequency synthesizers; Micromechanical devices; Resonance; Resonant frequency; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418961
  • Filename
    4418961