CMOS digitalized peak detector for a MEMS-based electrostatic field sensor

Author

Cui, Guoping ; Yang, Haigang ; Xia, Shanhong

Author_Institution

State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Beijing

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

131

Lastpage

134

Abstract

This paper presents a new CMOS peak detector that directly converts the peak of a sine wave signal to its digital representation. This peak detector is capable of capturing peak points that carry the information of the electrostatic field, simplifying the sample-and-hold requirement. By making use of the voltage to time conversion (or voltage to duty cycle conversion), the method boasts the advantage of high resolution compared with the conventional way of using AD converters. The circuit is fabricated in Chartered 0.35 um technology and is further tested.

Keywords

CMOS digital integrated circuits; analogue-digital conversion; microsensors; voltage measurement; AD converters; CMOS peak detector; MEMS-based electrostatic field sensor; sample-and-hold requirement; sine wave signal; voltage time conversion; Circuit testing; Detectors; Electrostatics; Fault location; Logic; Low pass filters; Sensor phenomena and characterization; Signal processing; Signal resolution; Voltage; MEMS; Peak detector; Sensor; Voltage to time conversion;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601155

Filename

4601155