Novel Ultra-Low Voltage and High-Speed Programming/Erasing Schemes for SONOS Flash Memory with Excellent Data Retention

Author

Chung, Steve S. ; Tseng, Y.H. ; Lai, C.S. ; Hsu, Y. ; Ho, Eric ; Chen, Terry ; Peng, L.C. ; Chu, C.H.

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

457

Lastpage

460

Abstract

A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory. First, in 1 bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50 Adeg), the ultra-low voltage (~5 V) and ultra-fast speed (<1musec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CHE (channel hot electron) or BTB(Band-to-band) tunneling etc.

Keywords

flash memories; high-speed techniques; hot carriers; nitrogen compounds; silicon compounds; SONOS flash memory; back-bias assisted hot hole injection; cell operation scheme; data retention; forward-bias assisted electron injection; high-speed programming/erasing scheme; silicon-oxide-nitride-oxide-silicon device; CMOS technology; Charge carrier processes; Data engineering; Flash memory; Hot carriers; P-n junctions; SONOS devices; Space charge; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418972

Filename

4418972