Title :
High power, highly reliable Al-free 940 nm diode lasers
Author :
Erbert, G. ; Beister, G. ; Knauer, A. ; Sebastian, J. ; Hulsewede, R. ; Wenzel, H. ; Weyers, M. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
We have demonstrated the excellent performance of high power Al-free InGaAs QW diode lasers in the wavelength range around 940 nm making these devices very well suited for pumping, material processing and telecommunication applications.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser materials processing; laser reliability; laser stability; laser transitions; optical pumping; optical transmitters; quantum well lasers; 940 nm; Al-free 940 nm diode lasers; InGaAs; InGaAs QW diode lasers; high power; highly reliable; laser material processing; laser pumping; optical telecommunication applications; Coatings; Degradation; Diode lasers; Fiber lasers; Laser excitation; Laser stability; Power generation; Testing; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882269
