COD-free high power (760 mW) 980 nm laser diodes with current-blocking facets

Author

Igarashi, T. ; Fukagai, K. ; Chida, H. ; Miyazaki, T. ; Horie, M. ; Ishikawa, S. ; Torikai, T.

Author_Institution

Syst. Devices & Fundamental Res., NEC Corp., Tsukuba, Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

25

Lastpage

26

Abstract

A buried ridge 980 nm InGaAs-GaAs double QW laser diode (LD) with current-blocking facets has demonstrated catastrophic optical damage (COD)-free maximum output power of 760 mW and linear power over 500 mW. The LDs show the same light output characteristics even after 1600 hours aging at 300 mW and 50/spl deg/C.

Keywords

III-V semiconductors; ageing; gallium arsenide; indium compounds; laser transitions; optical testing; quantum well lasers; ridge waveguides; semiconductor device testing; waveguide lasers; 1600 h; 300 mW; 50 C; 500 mW; 760 mW; 980 nm; COD-free high power 980 nm laser diodes; InGaAs-GaAs; aging; buried ridge 980 nm InGaAs-GaAs double QW laser diode; catastrophic optical damage; current-blocking facets; light output characteristics; linear power; maximum output power; Accelerated aging; Bit rate; Diode lasers; Explosives; Internet; National electric code; Optical devices; Optical pumping; Power generation; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882271

Filename

882271