Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes

Author

Li, Y.F. ; Kaneko, T. ; Hatakeyama, R.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

175

Lastpage

179

Abstract

We report electrical transport properties of resonance tunneling transistors fabricated using C₆₀-filled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 10³ are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.

Keywords

carbon nanotubes; fullerenes; resonant tunnelling transistors; C₆₀-C; backward measurement; electrical transport; forward measurement; metallic double-walled carbon nanotubes; negative differential resistance; resonance tunneling transistors; temperature 293 K to 298 K; Carbon nanotubes; Diodes; Encapsulation; Plasma accelerators; Plasma density; Plasma measurements; Plasma sheaths; Resonance; Tunneling; Voltage; carbon nanotubes; encapsulation; fullerene; negative differential resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601165

Filename

4601165