• DocumentCode
    2603876
  • Title

    Understanding Random Threshold Voltage Fluctuation by Comparing Multiple Fabs and Technologies

  • Author

    Takeuchi, K. ; Fukai, T. ; Tsunomura, T. ; Putra, A.T. ; Nishida, A. ; Kamohara, S. ; Hiramoto, T.

  • Author_Institution
    MIRAI-Selete, Ibaraki
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    467
  • Lastpage
    470
  • Abstract
    Random threshold voltage (VM) fluctuation data obtained from multiple fabs, generations and technologies, as well as theoretical / TCAD results are carefully compared using a special normalization method. It is revealed that P-FET fluctuation can be almost fully accounted for by dopant fluctuation regardless of device generations and designs, whereas extra fluctuation mechanism(s) significantly contributes to N-FETs.
  • Keywords
    MOSFET; fluctuations; technology CAD (electronics); MOSFET; P-FET fluctuation; dopant fluctuation; random threshold voltage fluctuation; techonology CAD; Data handling; Data mining; Dielectric devices; Differential equations; Fluctuations; Modems; National electric code; Semiconductor process modeling; Size measurement; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418975
  • Filename
    4418975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2603876