Transport properties of p-n junctions created in single-walled carbon nanotubes by Fe encapsulation

Author

Hatakeyama, R. ; Li, Y.F. ; Kaneko, T.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

180

Lastpage

184

Abstract

Electronic properties of single-walled carbon nanotubes (SWNTs) filled with Fe nanoparticles are studied by fabricating them as the channels of field-effect transistors (FETs). Our results reveal that Fe-filled SWNTs at low filling levels can exhibit high-performance p-n junction diode behavior. The synthesis of Fe-filled SWNTs is confirmed by transmission electron microscopy (TEM) observation, and magnetic properties of Fe encapsulated SWNTs are characterized by means of SQUID measurements.

Keywords

carbon nanotubes; elemental semiconductors; encapsulation; field effect transistors; iron; nanoparticles; nanotube devices; p-n junctions; semiconductor diodes; transmission electron microscopy; SQUID; encapsulation; field-effect transistors; filling levels; magnetic properties; nanoparticles; p-n junction behavior; single-walled carbon nanotubes; transmission electron microscopy; transport properties; Carbon nanotubes; Diodes; Electrons; Encapsulation; FETs; Filling; Iron; Magnetic force microscopy; Nanoparticles; P-n junctions; carbon nanotubes; encapsulation; magnetic; p-n junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601166

Filename

4601166