400 mW 980 nm-module with very high power conversion efficiency

Author

Schmidt, B. ; Pawlik, S. ; Rothfritz, H. ; Thies, A. ; Mordiek, S. ; Harder, C.

Author_Institution

JDS Uniphase, Zurich, Switzerland

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

29

Lastpage

30

Abstract

Highly reliable single mode high power laser diodes with an emission wavelength of around 980 nm are key elements for erbium doped fiber amplifiers (EDFA). The increasing demand for higher amplification power in future dense wavelength division multiplex (DWDM) systems forces the development of pump laser diodes with an operation power regime of 450 mW and more. In order to optimize our high power InGaAs-AlGaAs SQW laser diode we have therefore reduced the vertical far-field down to 17/spl deg/ while avoiding a reduction in power conversion efficiency.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser reliability; laser transitions; modules; optical pumping; quantum well lasers; semiconductor device reliability; wavelength division multiplexing; 400 mW; 400 mW 980 nm-module; 980 nm; DWDM; InGaAs-AlGaAs; amplification power; dense wavelength division multiplexing systems; emission wavelength; erbium doped fiber amplifiers; high power InGaAs-AlGaAs SQW laser diode optimisation; highly reliable single mode high power laser diodes; operation power regime; power conversion efficiency; pump laser diodes; vertical far-field; very high power conversion efficiency; Diode lasers; Laser excitation; Laser modes; Optical pumping; Optical waveguides; Power conversion; Power generation; Temperature; Thermal management; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882273

Filename

882273