Reducing Variation in Advanced Logic Technologies: Approaches to Process and Design for Manufacturability of Nanoscale CMOS

This paper presents an overview of process variation effects, including examples of mitigation strategies and test methods. Experimental and theoretical comparisons are presented for 45 nm and 65 nm RDF. SRAM matching and interconnect variation is discussed for both 65 nm and 45 nm, including examples of process and design mitigation strategies. Use of ring oscillators for detailed measurement of within-wafer and within-die variation is illustrated for 65 nm and 45 nm products.