Schottky barrier engineering in carbon nanotube with various metal electrodes

Author

Perello, David ; Kim, Moon.J. ; Cha, DongKyu ; Han, Gang Hee ; Bae, Dong Jae ; Jeong, Seung Yol ; Lee, Young Hee ; Yun, Minhee

Author_Institution

Dept. of Electr. & Comput. Eng., Pittsburgh Univ., Pittsburgh, PA

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

189

Lastpage

193

Abstract

We investigated carbon nanotube field effect transistors (CNT FET) utilizing semiconducting single-walled carbon nanotubes (SWCNTs). Multiple devices, each of different metal source and drain contacts, were fabricated on long (~11 micron) SWCNT. Large contact resistances around four MOmega were observed at room temperature. Low temperature measurements yielded varying contact resistances for these same devices. Transport properties of the devices follow to the Schottky contact and Poole-Frenkel model with measured 25-41 meV barriers for the devices.

Keywords

Poole-Frenkel effect; Schottky barriers; carbon nanotubes; contact resistance; field effect transistors; nanotube devices; semiconductor nanotubes; Poole-Frenkel model; Schottky barrier engineering; Schottky contact; carbon nanotube field effect transistors; contact resistances; drain contacts; metal electrodes; source contacts; CNTFETs; Carbon nanotubes; Electrodes; FETs; Hydrogen; Optical scattering; Schottky barriers; Semiconductivity; Temperature; USA Councils; Carbon Nanotubes; Nano architecture; Nanufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601168

Filename

4601168