• DocumentCode
    2603946
  • Title

    MOS/LSI Failure Analysis Techniques

  • Author

    Gear, Gary

  • Author_Institution
    Texas Instruments Incorporated, P. O. Box 1443 M/S 602, Houston, Texas 77001
  • fYear
    1973
  • fDate
    26755
  • Firstpage
    127
  • Lastpage
    132
  • Abstract
    With the rapid evolution of the functional complexity of MOS/LSI circuits, the task of detailed failure analysis has become increasingly complex. The failure analysis diagnostic techniques and laboratory procedures developed for the analysis of MOS/LSI circuits will be discussed and illustrated. These analysis techniques, emphasizing the use of computerized test equipment, were found to reduce significantly the laboratory cycle time and increase the level of understanding of MOS/LSI failure mechanisms.
  • Keywords
    Circuit analysis; Circuit testing; Dielectric substrates; Failure analysis; Laboratories; Large scale integration; Liquid crystals; Optical devices; Optical sensors; Test equipment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1973. 11th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1973.362583
  • Filename
    4207958