DocumentCode
2603946
Title
MOS/LSI Failure Analysis Techniques
Author
Gear, Gary
Author_Institution
Texas Instruments Incorporated, P. O. Box 1443 M/S 602, Houston, Texas 77001
fYear
1973
fDate
26755
Firstpage
127
Lastpage
132
Abstract
With the rapid evolution of the functional complexity of MOS/LSI circuits, the task of detailed failure analysis has become increasingly complex. The failure analysis diagnostic techniques and laboratory procedures developed for the analysis of MOS/LSI circuits will be discussed and illustrated. These analysis techniques, emphasizing the use of computerized test equipment, were found to reduce significantly the laboratory cycle time and increase the level of understanding of MOS/LSI failure mechanisms.
Keywords
Circuit analysis; Circuit testing; Dielectric substrates; Failure analysis; Laboratories; Large scale integration; Liquid crystals; Optical devices; Optical sensors; Test equipment;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1973.362583
Filename
4207958
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