Single-transverse-mode filtering utilizing proton implantation: 1.3-W CW diffraction-limited unstable-cavity lasers at 1.48 /spl mu/m

Author

Gerard, F. ; Delepine, S. ; Bissessur, H. ; Locatelli, D. ; Fillion, T. ; Bouche, N. ; Salet, P.

Author_Institution

Groupement d´Interet Econ., Alcatel Corp. Res. Center, Marcoussis, France

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

41

Lastpage

42

Abstract

We report the realization of a lossy filter utilizing ion implantation of the multiple-quantum-well (MQW) active layer along both sides of the ridge waveguide, and optimize the implantation process so as to enhance the diffraction-limited power level of our 1.48-μm unstable-cavity lasers. This enables at least 1.3 W of CW diffraction-limited power at 1.48 μm, which is the highest level ever reported for a structure without cavity-spoiling grooves.

Keywords

ion implantation; laser cavity resonators; laser stability; laser transitions; optical filters; semiconductor lasers; 1.3 W; 1.48 mum; CW diffraction-limited power; CW diffraction-limited unstable-cavity lasers; MQW active layer; cavity-spoiling grooves; diffraction-limited power level; implantation process; lossy filter; multiple-quantum-well; proton implantation; ridge waveguide; single-transverse-mode filtering; unstable-cavity lasers; Diffraction; Filtering; Laser modes; Laser theory; Optical filters; Optical waveguide theory; Optical waveguides; Protons; Quantum well devices; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882278

Filename

882278