Thin-film heater-loaded wavelength-tunable integrated laser/modulator

Author

Aoki, M. ; Ohishi, A. ; Shirai, M. ; Kaneko, R. ; Kuwano, H. ; Tsuji, S.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

47

Lastpage

48

Abstract

We have demonstrated a simple wavelength-tunable integrated laser/modulator based on an InGaAsP strained active layer that enables continuous wavelength tuning of several nm with a single electrical control. A 2.5-Gbit/s 600-km normal fiber transmission was demonstrated with a wavelength tuning range of 200 GHz.

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; gallium arsenide; gallium compounds; heating; indium compounds; integrated optoelectronics; laser tuning; ridge waveguides; semiconductor lasers; waveguide lasers; wavelength division multiplexing; 1.55 mum; 2.5 Gbit/s; InGaAsP; InGaAsP strained active layer; continuous wavelength tuning; normal fiber transmission; single electrical control; thin-film heater-loaded wavelength-tunable integrated laser/modulator; wavelength tuning range; wavelength-tunable integrated laser/modulator; Fiber lasers; Laser tuning; Optical control; Optical modulation; Semiconductor device measurement; Temperature; Transistors; Tunable circuits and devices; Wavelength division multiplexing; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882281

Filename

882281