DocumentCode

2604069

Title

Effects of Mechanical Stress on the Electrical Behavior of MOS Devices

Author

Wonsiewicz, B.C. ; McCaughan, D.V.

Author_Institution

Bell Laboratories, Murray Hill, New Jersey 07974

fYear

1973

fDate

26755

Firstpage

177

Lastpage

178

Keywords

Compressive stress; Interface states; MOS capacitors; MOS devices; Metallization; Silicon; Temperature; Tensile stress; Thermal stresses; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1973. 11th Annual

Conference_Location

Las Vegas, NV, USA

ISSN

0735-0791

Type

conf

DOI

10.1109/IRPS.1973.362591

Filename

4207966