Title :
Process Technology - Gate Stack Process II - Metal Gate / High K Integration
Author :
Eguchi, Kazuhiro ; Colombo, Luigi
Author_Institution :
Toshiba
Keywords :
Dielectric devices; Dielectric materials; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Instruments; MOS devices; Scalability; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418988
