• DocumentCode
    2604123
  • Title

    Feasible Integration Scheme for Dual Work Function FUSI/HfSiON Gate Stacks with Selective Metal Pile-up to nMOSFET

  • Author

    Tsuchiya, Y. ; Yoshiki, M. ; Kaneko, Akito ; Inumiya, S. ; Saito, Takashi ; Nakajima, Kensuke ; Aoyama, Tadayoshi ; Nishiyama, A. ; Koyama, Masanori

  • Author_Institution
    Corp. R&D Center, Toshiba
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    519
  • Lastpage
    522
  • Abstract
    We propose a feasible integration scheme for dual FUSI/HfSiON CMOS with low work function metal pile-up to nMOSFET. A newly developed post phase change process to Ni3Si and composition-dependent diffusivity of Al realize simplified integration of 4.3 eV/4.8 eV. Moreover, direct WF lowering of Pt2Si with metal pile-up realizes 4.3 eV/4.9 eV.
  • Keywords
    CMOS integrated circuits; MOSFET; hafnium compounds; nickel alloys; platinum alloys; silicon alloys; silicon compounds; work function; CMOS; HfSiON; Ni3Si; Pt2Si; composition-dependent diffusivity; integration scheme; nMOSFET; post phase change process; work function metal pile-up; Annealing; CMOS process; CMOS technology; Etching; Laboratories; Large scale integration; MOS devices; MOSFET circuits; Research and development; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418989
  • Filename
    4418989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2604123