Title :
Feasible Integration Scheme for Dual Work Function FUSI/HfSiON Gate Stacks with Selective Metal Pile-up to nMOSFET
Author :
Tsuchiya, Y. ; Yoshiki, M. ; Kaneko, Akito ; Inumiya, S. ; Saito, Takashi ; Nakajima, Kensuke ; Aoyama, Tadayoshi ; Nishiyama, A. ; Koyama, Masanori
Author_Institution :
Corp. R&D Center, Toshiba
Abstract :
We propose a feasible integration scheme for dual FUSI/HfSiON CMOS with low work function metal pile-up to nMOSFET. A newly developed post phase change process to Ni3Si and composition-dependent diffusivity of Al realize simplified integration of 4.3 eV/4.8 eV. Moreover, direct WF lowering of Pt2Si with metal pile-up realizes 4.3 eV/4.9 eV.
Keywords :
CMOS integrated circuits; MOSFET; hafnium compounds; nickel alloys; platinum alloys; silicon alloys; silicon compounds; work function; CMOS; HfSiON; Ni3Si; Pt2Si; composition-dependent diffusivity; integration scheme; nMOSFET; post phase change process; work function metal pile-up; Annealing; CMOS process; CMOS technology; Etching; Laboratories; Large scale integration; MOS devices; MOSFET circuits; Research and development; X-ray scattering;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4418989
