Title :
High single mode operation from hybrid ion implanted/selectively oxidized VCSELs
Author :
Choquette, K.D. ; Fischer, A.J. ; Geib, K.M. ; Hadley, G.R. ; Allerman, A.A. ; Hindi, J.J.
Author_Institution :
Center for Compound Semicond. Sci. & Technol., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. We report single mode output of more than 5 mW for 850 nm VCSELs fabricated using a hybrid ion implantation and selective oxidation device structure designed to achieve this end.
Keywords :
MOCVD; infrared sources; ion implantation; laser modes; laser transitions; optical fabrication; optical losses; oxidation; semiconductor lasers; semiconductor technology; surface emitting lasers; vapour phase epitaxial growth; 5 mW; 850 nm; VCSELs; central region; high single mode operation; hybrid ion implanted/selectively oxidized VCSELs; modal discrimination; optical loss; single mode output; Apertures; Implants; Laser modes; Laser theory; Optical modulation; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882287
