High single mode operation from hybrid ion implanted/selectively oxidized VCSELs

Author

Choquette, K.D. ; Fischer, A.J. ; Geib, K.M. ; Hadley, G.R. ; Allerman, A.A. ; Hindi, J.J.

Author_Institution

Center for Compound Semicond. Sci. & Technol., Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

59

Lastpage

60

Abstract

The modal discrimination can be augmented by creating a central region of gain surrounded by a region of optical loss. We report single mode output of more than 5 mW for 850 nm VCSELs fabricated using a hybrid ion implantation and selective oxidation device structure designed to achieve this end.

Keywords

MOCVD; infrared sources; ion implantation; laser modes; laser transitions; optical fabrication; optical losses; oxidation; semiconductor lasers; semiconductor technology; surface emitting lasers; vapour phase epitaxial growth; 5 mW; 850 nm; VCSELs; central region; high single mode operation; hybrid ion implanted/selectively oxidized VCSELs; modal discrimination; optical loss; single mode output; Apertures; Implants; Laser modes; Laser theory; Optical modulation; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882287

Filename

882287