Characterization of nonlinear behavior of GaAs HFET power amplifier IC based on multitone measurement and simulation

Author

Saripudin, A. ; Hutabarat, M.T. ; Alam, B.R.

Author_Institution

Dept. of Electr. Eng., Inst. Teknologi Bandung, Indonesia

Volume

2

fYear

2002

fDate

2002

Firstpage

315

Abstract

A characterization of nonlinear behavior of GaAs HFET power amplifier has been carried out. The SHF0186K GaAs HFET model, which is used to derive the Curtice-Ettenberg model parameter, was extracted. We use these model parameters to characterize the amplifier based on multitone simulation. In this project, we also investigate the nonlinear behavior of an amplifier under various gate-source voltages. The simulation result, therefore, is compared with the measurement result.

Keywords

III-V semiconductors; circuit simulation; equivalent circuits; field effect analogue integrated circuits; gallium arsenide; nonlinear network analysis; power amplifiers; power field effect transistors; power integrated circuits; radiofrequency amplifiers; semiconductor device models; Curtice-Ettenberg model parameter; GaAs; GaAs HFET power amplifier IC; SHF0186K GaAs HFET model; gate-source voltages; model parameter extraction; multitone simulation; nonlinear behavior; nonlinear characterization; power amplifier characterization; FETs; Gallium arsenide; HEMTs; High power amplifiers; Linearity; MODFETs; Microwave amplifiers; Power amplifiers; Power measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2002. APCCAS '02. 2002 Asia-Pacific Conference on

Print_ISBN

0-7803-7690-0

Type

conf

DOI

10.1109/APCCAS.2002.1115246

Filename

1115246