2-D phased-locked antiguided vertical cavity surface emitting laser arrays

Author

Zhou, D. ; Mawst, L.J.

Author_Institution

Wisconsin Univ., Madison, WI, USA

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

61

Lastpage

62

Abstract

We demonstrate that 2D (4x4) VCSEL arrays can be designed to operate in a stable in-phase mode in good agreement with theory. Calculations show resonant couplings for the in-phase (out-of-phase) mode occurs when the inter-element spacing corresponds to an odd (even) integral number of half-waves of the antiguide. It consists of 27.5 pairs of AlAs-GaAs n-DBR, 23 pairs of AlGaAs-GaAs p-DBR and an optical cavity which includes 3-InGaAs quantum wells, GaAs barrier layers, and AlGaAs confinement layers for 980nm emission.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; infrared sources; laser mode locking; laser modes; laser stability; laser transitions; quantum well lasers; semiconductor laser arrays; surface emitting lasers; waveguide lasers; 2-D phased-locked antiguided vertical cavity surface emitting laser arrays; 2D 4x4 VCSEL arrays; 980 nm; AlAs-GaAs; AlGaAs; AlGaAs confinement layers; AlGaAs-GaAs; AlGaAs-GaAs DBR laser; InGaAs; InGaAs quantum wells; barrier layers; in-phase out-of-phase mode; inter-element spacing; odd even integral number; optical cavity; resonant couplings; stable in-phase mode; Gallium arsenide; Optical arrays; Optical pumping; Phased arrays; Power engineering and energy; Power generation; Resonance; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882288

Filename

882288