DocumentCode
2604160
Title
Reliability Improvements in Electron Bombarded Semiconductor Power Devices
Author
Bates, David J. ; Silzars, Aris ; Ballonoff, Aaron
Author_Institution
Watkins-Johnson Company, Palo Alto, California
fYear
1973
fDate
26755
Firstpage
208
Lastpage
213
Abstract
Electron Bombarded Semiconductor or EBS Power Devices have presented some unique reliability problems to the developers. Recently many of the design difficulties have been overcome and devices have now demonstrated over 3000 hours of operation. This paper briefly discusses some of the reliability improvements and describes the development of reliable, radiation resistant semiconductor targets.
Keywords
Acceleration; Cathodes; Electron beams; Electron sources; Laboratories; Particle beams; Power supplies; Semiconductor device reliability; Semiconductor diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1973. 11th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1973.362598
Filename
4207973
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