Large-area high-power VCSEL

Author

Miller, M. ; Grabherr, M. ; Jager, R. ; Unold, H.J. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

63

Lastpage

64

Abstract

We have fabricated high-power bottom-emitting VCSELs for a wavelength of 990 nm with a record high maximum output power of 0.89 W. Favorable beam characteristics such as a circularly symmetric near-field pattern and low divergence far-field together with high power density of more than 1.1 kW/cm/sup 2/ allow for multimode fiber coupled power of more than 0.5 W. Further improved beam quality can be obtained applying an external reflector for higher order transverse mode filtering.

Keywords

laser beams; laser cavity resonators; laser modes; laser variables measurement; optical fabrication; optical fibre couplers; optical filters; quantum well lasers; surface emitting lasers; 0.5 W; 0.89 W; 990 nm; beam characteristics; circularly symmetric near-field pattern; external reflector; fabrication; high power density; high-power bottom-emitting VCSELs; higher order transverse mode filtering; improved beam quality; large-area high-power VCSEL; low divergence far-field; multimode fiber coupled power; vertical cavity surface emitting lasers; Heat sinks; Indium gallium arsenide; Mirrors; Molecular beam epitaxial growth; Optical arrays; Optical devices; Optical fiber devices; Optical recording; Power generation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882289

Filename

882289