Gain in ultra-low-threshold InAs/InGaAs quantum dot lasers

Author

Eliseev, P.G. ; Li, H. ; Liu, G.T. ; Stintz, A. ; Newell, T.C. ; Lester, L.F. ; Malloy, K.J.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

65

Lastpage

66

Abstract

Semiconductor lasers are grown on a GaAs substrate by MBE containing self-assembled InAs quantum dots (QDs) in an InGaAs quantum well, the so-called dot-in-a-well (DWELL) structure. The QDs are /spl sim/15 nm in diameter in the basal plane and /spl sim/7 nm in height. Several wafers are investigated in detail. The in-plane dot density is either 2.5x10/sup 10/ or 7.5x10/sup 10/ cm/sup -2/. The ground-state emission wavelength is 1230-1250 nm at room temperature, and the spectral FWHM is from 40 to 75 nm. We obtained and analyzed the dependence of the gain on current density in ultra-low-threshold laser diodes with DWELL quantum-dot structures.

Keywords

III-V semiconductors; current density; gallium arsenide; ground states; indium compounds; laser beams; laser transitions; molecular beam epitaxial growth; optical fabrication; optical losses; population inversion; quantum well lasers; semiconductor quantum dots; 1230 to 1250 nm; 15 nm; 298 K; 7 nm; DWELL structures; GaAs; GaAs substrate; InAs; InAs-InGaAs; InAs/InGaAs quantum dot lasers; InGaAs; InGaAs quantum well; MBE; basal plane; current density; dot-in-a-well structure; gain; ground-state emission wavelength; height; in-plane dot density; quantum-dot structures; room temperature; self-assembled InAs quantum dots; semiconductor lasers; spectral FWHM; ultra-low-threshold laser diodes; ultra-low-threshold quantum dot lasers; wafers; Current density; Diode lasers; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882290

Filename

882290