1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 /spl mu/m band

Author

Koyama, F. ; Schlenker, D. ; Miyamoto, T. ; Chen, Z. ; Yamatoya, T. ; Kondo, T. ; Iga, K.

Author_Institution

Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

71

Lastpage

72

Abstract

Presents the high power operation of a tapered superluminescent diode with highly strained GaInAs/GaAs QWs emitting at in the 1.2 /spl mu/m band. As its background, we achieved the wavelength extension of GaInAs/GaAs QWs beyond 1.2 /spl mu/m by using highly strained QWs. Also, we presented low threshold and excellent temperature characteristics of 1.2 /spl mu/m QW lasers, and their application for single mode fiber datacom. However, there have been difficulties in realizing high power light sources in the wavelength range of 1.1-1.2 /spl mu/m. They may open up new applications, which include pumping for 1.2-1.3 /spl mu/m Raman fiber amplifiers, free-space LANs and so on.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; light sources; optical fabrication; optical fibre communication; optical pumping; optical transmitters; quantum well devices; quantum well lasers; ridge waveguides; superluminescent diodes; waveguide lasers; 1.1 to 1.2 mum; 1.2 mum; 1.2 to 1.3 mum; 1.5 W; GaInAs-GaAs; GaInAs/GaAs quantum well; Raman fiber amplifiers; free-space LANs; high power light sources; high power operation; highly strained quantum well; low threshold characteristics; pumping; single mode fiber datacom; superluminescent diode; tapered superluminescent diode; temperature characteristics; wavelength extension; wavelength range; Fiber lasers; Gallium arsenide; Laser applications; Laser modes; Light sources; Optical fiber LAN; Pump lasers; Stimulated emission; Superluminescent diodes; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882293

Filename

882293