• DocumentCode
    2604307
  • Title

    Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions

  • Author

    Reggiani, Susanna ; Silvestri, Luca ; Cacciatori, Alessio ; Gnani, Elena ; Gnudi, Antonio ; Baccarani, Giorgio

  • Author_Institution
    Univ. of Bologna, Bologna
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    557
  • Lastpage
    560
  • Abstract
    A compact model of the low-field effective carrier mobility is developed for n- and p-type MOSFETs with either polySi or TiN gate, ultrathin SiO2/HfO2 gate stacks, and silicon under biaxial or uniaxial stress conditions. Physical insights, theoretical analyses and experimental investigations are used to develop and accurately calibrate the model.
  • Keywords
    MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; semiconductor device models; silicon; silicon compounds; stress effects; MOSFET; SiO2-HfO2; biaxial/uniaxial stress condition; low-field carrier mobility; ultrathin high-k gate stacks; unified compact model; Automation; Electron mobility; Hafnium oxide; Light scattering; MOSFETs; Semiconductor device modeling; Semiconductor process modeling; Silicon; Stress; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4418999
  • Filename
    4418999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2604307