DocumentCode
2604337
Title
A Multi-Gate MOSFET Compact Model Featuring Independent-Gate Operation
Author
Lu, Darsen D. ; Dunga, Mohan V. ; Lin, Chung-Hsun ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution
Univ. of California, Berkeley
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
565
Lastpage
568
Abstract
A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.
Keywords
MOSFET; technology CAD (electronics); TCAD simulation; independent-gate operation; multigate MOSFET; Analytical models; Capacitance-voltage characteristics; Circuit synthesis; Electronic mail; Feedback; FinFETs; Iterative algorithms; MOSFET circuits; Random access memory; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419001
Filename
4419001
Link To Document