Title :
A Multi-Gate MOSFET Compact Model Featuring Independent-Gate Operation
Author :
Lu, Darsen D. ; Dunga, Mohan V. ; Lin, Chung-Hsun ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
Univ. of California, Berkeley
Abstract :
A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.
Keywords :
MOSFET; technology CAD (electronics); TCAD simulation; independent-gate operation; multigate MOSFET; Analytical models; Capacitance-voltage characteristics; Circuit synthesis; Electronic mail; Feedback; FinFETs; Iterative algorithms; MOSFET circuits; Random access memory; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419001
