Title :
Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs
Author :
Takaoka, K. ; Ishikawa, M. ; Hatakoshi, G.
Author_Institution :
Adv. Discrete Semicond. Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs) are attractive light sources for plastic optical fiber (POF)-based low-cost and high-speed data links, because the POF has a low-loss window around the 650-nm wavelength region, and VCSELs are suitable for high-speed modulation and can be treated easily as is the case for LEDs. We have fabricated InGaAlP-based red VCSELs using the proton-implanted planar structures, and realized continuous-wave (CW) operation up to 60/spl deg/C with the lasing wavelength of 666 nm and the threshold current of 2.5 mA.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; ion implantation; laser beams; laser cavity resonators; light sources; optical fabrication; optical fibre communication; optical modulation; optical transmitters; surface emitting lasers; 2.5 mA; 60 C; 650 nm; 666 nm; InGaAlP; InGaAlP-based proton-implanted red VCSELs; LEDs; continuous-wave operation; fabrication; high-speed data links; high-speed modulation; high-temperature operation; lasing wavelength; light sources; low-cost data links; low-loss window; low-threshold operation; plastic optical fiber; proton-implanted planar structures; proton-implanted red VCSELs; red vertical-cavity surface-emitting lasers; threshold current; Fiber lasers; Light sources; Optical fibers; Optical modulation; Optical surface waves; Plastics; Surface emitting lasers; Surface treatment; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882304
