Diodes with window-mirror structure

Author

Kawazu, Z. ; Tashiro, Y. ; Shima, A. ; Suzuki, D. ; Nishiguchi, H. ; Yagi, T. ; Omura, E.

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Itami, Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

97

Lastpage

98

Abstract

The high power operation of the lateral mode stabilized 785nm AlGaAs LD with the window-mirror structure has been demonstrated. The stable lateral mode operation up to 250mW (kink level of 280 mW) is realized. To the best our knowledge, this is the highest power record among the narrow stripe LDs with a wavelength of 785 nm and is suitable for CD ROM disc drives.

Keywords

III-V semiconductors; aluminium compounds; disc drives; gallium arsenide; infrared sources; laser mirrors; laser modes; laser stability; laser transitions; optical windows; semiconductor lasers; 250 mW; 280 mW; 785 nm; AlGaAs; CD ROM disc drives; high power operation; kink level; lateral mode; narrow stripe LDs; stable lateral mode operation; window-mirror structure laser diodes; Degradation; Diode lasers; Electrons; Mirrors; Optical refraction; Optical variables control; Optical waveguides; Power generation; Semiconductor diodes; Yagi-Uda antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882306

Filename

882306