Continuous-wave operation of InGaN multiple quantum well laser diodes on copper substrates obtained by laser lift-off

In recent years tremendous progress has been made in the development of AlGaInN laser diodes (LDs) and the commercialization of violet laser diodes has just recently begun. An important factor in order to improve laser diode performance and lifetime was the reduction of the dislocation density in the GaN material. In this paper we will report on the performance characteristics of cw laser diodes grown by metal organic chemical vapor deposition on laterally epitaxially overgrown GaN on sapphire substrates (ELOG). The InGaAlN films were processed into ridge-waveguide lasers with CAIBE etched mirrors and a high reflective coating on the backside facet.