Selective disordering of InGaAs strained quantum well by rapid thermal annealing with SiO/sub 2/ caps of different thicknesses for photonic integration

Author

Shimada, N. ; Fukumoto, Yasutaka ; Uemukai, M. ; Suhara, Toshiaki ; Nishihara, H. ; Larsson, A.

Author_Institution

Dept. of Electron. Eng., Osaka Univ., Japan

fYear

2000

fDate

25-28 Sept. 2000

Firstpage

117

Lastpage

118

Abstract

We report impurity-free selective disordering by RTA with thick and thin SiO/sub 2/ caps for an InGaAs/AlGaAs strained QW structure. We present Fabry-Perot (FP) lasers integrated with selectively-disordered passive waveguides and demonstrate reduction of the passive waveguide loss. In the experiment, an InGaAs/AlGaAs strained single QW graded-index separate confinement heterostructure was used.

Keywords

Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; indium compounds; laser cavity resonators; optical fabrication; optical losses; optical planar waveguides; quantum well lasers; rapid thermal annealing; Fabry-Perot lasers; InGaAs strained quantum well; InGaAs-AlGaAs; InGaAs/AlGaAs strained QW structure; InGaAs/AlGaAs strained single QW graded-index separate confinement heterostructure; SiO/sub 2/; SiO/sub 2/ caps; impurity-free selective disordering; passive waveguide loss; photonic integration; rapid thermal annealing; selective disordering; selectively-disordered passive waveguides; thick SiO/sub 2/ caps; thicknesses; thin SiO/sub 2/ caps; Electrons; Hafnium; Indium gallium arsenide; Mirrors; Optical arrays; Rapid thermal annealing; Reflectivity; Threshold current; Waveguide lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-6259-4

Type

conf

DOI

10.1109/ISLC.2000.882316

Filename

882316