Title :
Hole confinement in strain-compensated-SQW (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasers
Author :
Susaki, W. ; Kondo, K. ; Yaku, H. ; Asano, H. ; Fukunaga, T. ; Hayakawa, T.
Author_Institution :
Osaka Electro-Commun. Univ., Neyagawa, Japan
Abstract :
The hole confinement at threshold on indium content in strain-compensated (In/sub x/Ga/sub 1-x/As/GaAs/sub 0.2/P/sub 0.8/)/GaAs SQW lasers is investigated by rate equation analysis of the lasing delay time. It is shown that the temperature insensitive threshold current in these lasers is due to complete hole confinement in HH (heavy hole) band due to larger energy difference between HH and LH (light hole) bands by the excellent strain-compensated configuration. The spontaneous recombination lifetime increases with x. A temperature insensitive lifetime (8.5 ns) is observed between 20 and 8/spl deg/C for x=0.3.
Keywords :
III-V semiconductors; carrier density; carrier relaxation time; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; (In/sub x/Ga/sub 1-x/As/GaAs/sub 0.2/P/sub 0.8/)/GaAs lasers; (In/sub x/Ga/sub 1-x/As/GaAsP)/GaAs lasers; 20 to 80 C; 8.5 ns; InGaAs-GaAsP-GaAs; energy difference; heavy hole band; hole confinement; lasing delay time; light hole bands; rate equation analysis; spontaneous recombination lifetime; strain-compensated configuration; strain-compensated single quantum well laser; temperature insensitive lifetime; temperature insensitive threshold current; Charge carrier density; Delay effects; Equations; Fiber lasers; Gallium arsenide; Pump lasers; Quantum well lasers; Radiative recombination; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-6259-4
DOI :
10.1109/ISLC.2000.882317
