Title :
90 nm Self-aligned Enhancement-mode InGaAs HEMT for Logic Applications
Author :
Waldron, Niamh ; Kim, Dae-Hyun ; del Alamo, Jesús A.
Author_Institution :
MIT, Cambridge
Abstract :
We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20times reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a VT of 60 mV, gm of 1.3 mS/mum, DIBL of 55 mV/V and a SS of 70 m V/dec.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; indium compounds; logic circuits; InGaAs; gate-source ohmic separation; logic applications; self-aligned enhancement-mode HEMT; size 90 nm; voltage 60 mV; Dry etching; Fabrication; HEMTs; Indium gallium arsenide; Indium phosphide; Lithography; Logic devices; Ohmic contacts; Surface resistance; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4244-1507-6
Electronic_ISBN :
978-1-4244-1508-3
DOI :
10.1109/IEDM.2007.4419019
