• DocumentCode
    2604657
  • Title

    90 nm Self-aligned Enhancement-mode InGaAs HEMT for Logic Applications

  • Author

    Waldron, Niamh ; Kim, Dae-Hyun ; del Alamo, Jesús A.

  • Author_Institution
    MIT, Cambridge
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    633
  • Lastpage
    636
  • Abstract
    We have demonstrated 90 nm self-aligned enhancement mode InGaAs HEMTs with outstanding logic figures of merit. The gate-source ohmic separation was reduced to 60 nm, a 20times reduction over conventional designs. Devices in which the barrier was thinned to 5 nm by means of a dry etch had a VT of 60 mV, gm of 1.3 mS/mum, DIBL of 55 mV/V and a SS of 70 m V/dec.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; indium compounds; logic circuits; InGaAs; gate-source ohmic separation; logic applications; self-aligned enhancement-mode HEMT; size 90 nm; voltage 60 mV; Dry etching; Fabrication; HEMTs; Indium gallium arsenide; Indium phosphide; Lithography; Logic devices; Ohmic contacts; Surface resistance; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419019
  • Filename
    4419019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2604657