DocumentCode
2604796
Title
InP-based vertical-cavity surface-emitting lasers for 1.5-1.8 /spl mu/m wavelength range
Author
Shau, R. ; Ortsiefer, M. ; Bohm, G. ; Kohler, F. ; Amann, M.-C.
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear
2000
fDate
25-28 Sept. 2000
Firstpage
153
Lastpage
154
Abstract
A novel approach for VCSELs in the 1.5-1.8 /spl mu/m wavelength range has been presented yielding submilliamp lasing in CW operation to beyond room temperature, optical powers in excess of 1 mW and single mode operation.
Keywords
indium compounds; infrared sources; laser transitions; quantum well lasers; surface emitting lasers; 1.5 to 1.8 mum; CW operation; InP; InP-based vertical-cavity surface-emitting lasers; VCSELs; optical powers; room temperature; single mode operation; submilliamp lasing; Dielectric substrates; Distributed Bragg reflectors; Mirrors; Optical sensors; Optical surface waves; Resistance heating; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-6259-4
Type
conf
DOI
10.1109/ISLC.2000.882333
Filename
882333
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