• DocumentCode
    2604813
  • Title

    Die Bond Failure Modes

  • Author

    Johnson, J.E.

  • Author_Institution
    Westinghouse Electric Corporation, Semiconductor Division, Youngwood, Pa. 15697
  • fYear
    1974
  • fDate
    27120
  • Firstpage
    150
  • Lastpage
    154
  • Abstract
    Die bond failures are of particular concern because of their impact on the stability of device electrical performance over a period of time in use, during which the device may be subjected to elevated temperatures, thermal cycling, and hostile ambients. The ultimate failure of a die bond comes when the device fails either to block voltage, or to conduct current because either the semiconducting element has cracked, or the solder bond has ruptured. Earlier, before such catastrophic happenings, it is possible to find indications of trouble in developing trends toward increased junction leakage currents, or decreased power handling capability when heat can no longer be dissipated fast ecx nough to dat nough to prevent the device from going into secondary breakdown.
  • Keywords
    Assembly; Chemical analysis; Microassembly; Plastics; Silicon; Substrates; Temperature; Thermal resistance; Thermal stresses; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1974. 12th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1974.362641
  • Filename
    4208019