DocumentCode
2604813
Title
Die Bond Failure Modes
Author
Johnson, J.E.
Author_Institution
Westinghouse Electric Corporation, Semiconductor Division, Youngwood, Pa. 15697
fYear
1974
fDate
27120
Firstpage
150
Lastpage
154
Abstract
Die bond failures are of particular concern because of their impact on the stability of device electrical performance over a period of time in use, during which the device may be subjected to elevated temperatures, thermal cycling, and hostile ambients. The ultimate failure of a die bond comes when the device fails either to block voltage, or to conduct current because either the semiconducting element has cracked, or the solder bond has ruptured. Earlier, before such catastrophic happenings, it is possible to find indications of trouble in developing trends toward increased junction leakage currents, or decreased power handling capability when heat can no longer be dissipated fast ecx nough to dat nough to prevent the device from going into secondary breakdown.
Keywords
Assembly; Chemical analysis; Microassembly; Plastics; Silicon; Substrates; Temperature; Thermal resistance; Thermal stresses; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1974.362641
Filename
4208019
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