Fabrication and evaluation of metal-oxide-semiconductor transistor probe

Author

Lee, Sang H. ; Lim, Geunbae ; Moon, Wonkyu

Author_Institution

Dept. of Mech. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

470

Lastpage

473

Abstract

The metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip is fabricated and evaluated for the surface electric properties. The high working speed and the high sensitivity of the MOS transistor improve the scanning speed and the system minimization. The device is fabricated with the standard CMOS process and FIB nano deposition. The device is applied to the patterned sample plate, and the measuring result shows the well defined line patterns.

Keywords

CMOS integrated circuits; MOSFET; focused ion beam technology; nanotechnology; FIB nanodeposition; MOS transistor; focused-ion-beam technique; metal-oxide-semiconductor transistor probe; semiconductor device fabrication; standard CMOS process; surface electric properties; CMOS process; Current measurement; Fabrication; Frequency; MOSFETs; Mechanical engineering; Mechanical factors; Nanotechnology; Scanning probe microscopy; Shape; FIB; Metal-Oxide-Semicondutor (MOS) transistor; SPM probe; nano tip; surface electric property;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601234

Filename

4601234