Title :
Electron Injection and Trapping in Pyrolytic A12O3
Author_Institution :
RCA Laboratories, Princeton, NJ 08540
Abstract :
Pyrolytic aluminum oxide has emerged as an MIS gate insulator which has good interface properties on silicon and is superior to SiO2 in radiation hardness. Experience has proven that this material and the pyrolytic deposition method are compatible with silicon technology and, in particular Al2O3 has been used to fabricate radiation-hard MOS integrated circuits, including the complementary-symmetry MOS (COS/MOS) circuits.
Keywords :
Aluminum oxide; Electron traps; Insulation; Integrated circuit reliability; Integrated circuit technology; Laboratories; MIS devices; MOS integrated circuits; Silicon on insulator technology; Temperature dependence;
Conference_Titel :
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1974.362661
