InGaN/GaN multiple quantum wells with surface micro hole array structures

In this paper, the surface micro hole array photonic crystal structures were fabricated on p-type GaN of InGaN/GaN through photolithography and ICP dry etching process. We designed three different patterns of circle hole arrays, including square lattice array, triangle lattice array, and honeycomb lattice array. The hole diameter was around 6 mum, and the period of the lattice array was about 15 mum. There were two different depths in the lattice arrays, 1.1 mum and 100 nm. The increase in photoluminescence intensity of the InGaN/GaN multiple quantum wells with the square lattice array, triangle lattice array, and honeycomb lattice array structures have been 208%, 188%, and 90%, respectively. We found that the square lattice array structure induced the highest light extraction efficiency.