High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node

Author

Suthram, S. ; Majhi, P. ; Sun, G. ; Kalra, P. ; Harris, H.R. ; Choi, K.J. ; Heh, D. ; Oh, J. ; Kelly, D. ; Choi, R. ; Cho, B.J. ; Hussain, M.M. ; Smith, C. ; Banerjee, S. ; Tsai, W. ; Thompson, S.E. ; Tseng, H.-H. ; Jammy, R.

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

727

Lastpage

730

Abstract

We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond.

Keywords

Ge-Si alloys; MOSFET; elemental semiconductors; k.p calculations; nanoelectronics; quantum well devices; semiconductor quantum wells; silicon; Si-Si_1-xGe_x-Si; additive uniaxial strain; high- k-metal gate stacks; high-performance pMOSFET; k.p calculations; low-off-state leakage; nanotechnology node; size 22 nm; strained quantum wells; uniaxial stress; Capacitive sensors; Epitaxial growth; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; MOSFETs; Rapid thermal annealing; Silicon germanium; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4419049

Filename

4419049